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Shinsuke Fujiwara

H - Electricity – 01 – L

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Country: Japan

A method for the heat treatment of a znse crystal substrate,...

C - Chemistry – Metallurgy – 30 – B
Patent

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A method for the heat treatment of znse crystal

C - Chemistry – Metallurgy – 30 – B
Patent

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A method of suppressing convection in a fluid in a...

C - Chemistry – Metallurgy – 30 – B
Patent

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Alxgayin1-x-yn crystal substrate, semiconductor device, and...

H - Electricity – 01 – L
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Freestanding iii-nitride single-crystal substrate and method...

H - Electricity – 01 – L
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Profile ID: LFCA-PAI-P-1308890

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