Apparatus and method for sputtering a magnetron target

C - Chemistry – Metallurgy – 23 – C

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C23C 14/35 (2006.01) H01J 37/34 (2006.01)

Patent

CA 2319364

Material utilization and process stability for rotating cylindrical magnetron target (14) used in a sputtering structure or "race track" (12), allowing the power density on the target surface (14) to be reduced by approximately 50 % for any given point where magnetic confinement of the plasma exists. Offsetting one race track (12) relative to the other (10) along the longitudinal axis of the target (14) reduces the power density at each turn-around area (relative to the longitudinal area). Modestly increasing the target material thickness at the ends of the target allows nearly all of the material between the turn- around areas to be sputtered.

Utilisation matérielle et stabilité de traitement pour une cible (14) magnétron, cylindrique et rotative utilisée dans une structure de pulvérisation du type "pistes de champ de course" (12), permettant de réduire la densité d'énergie sur la surface cible (14) d'environ 50 % pour n'importe quel point donné où le confinement magnétique du plasma existe. Dévier une piste (12) par rapport à l'autre (10) le long de l'axe longitudinal de la cible (14) réduit la densité d'énergie au niveau de chaque zone boucle (par rapport à la zone longitudinale). Augmenter légèrement l'épaisseur de la matière cible au niveau des extrémités de la cible permet de pulvériser la quasi totalité de la matière située entre les zones boucles.

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