4. H - Electricity
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Takashi Sakurada

H - Electricity – 01 – L

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Country: Japan

Compound semiconductor single-crystal manufacturing device...

C - Chemistry – Metallurgy – 30 – B
Patent

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Epitaxial substrate and semiconductor element

H - Electricity – 01 – L
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Group iii nitride semiconductor device and epitaxial substrate

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Group iii nitride semiconductor device and epitaxial substrate

H - Electricity – 01 – L
Patent

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Group iii nitride semiconductor device and epitaxial substrate

H - Electricity – 01 – L
Patent

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Profile ID: LFCA-PAI-P-1504742

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