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Tatsuya Tanabe

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Country: Japan

Group iii nitride semiconductor device and epitaxial substrate

H - Electricity – 01 – L
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Group iii nitride semiconductor device and epitaxial substrate

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Patent

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High electron mobility transistor, field-effect transistor,...

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Vertical gallium nitride semiconductor device and epitaxial...

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Profile ID: LFCA-PAI-P-1657483

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