C - Chemistry – Metallurgy – 23 – F
Inventor
C - Chemistry, Metallurgy
23
F
Inventor
Country: United States Of America
Dry etching of silicon carbide
Large area silicon carbide devices and manufacturing methods...
Large area silicon carbide devices and manufacturing methods...
Latch-up free power mos-bipolar transistor
Metal oxide semiconductor field-effect transistor formed in...
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Profile ID: LFCA-PAI-P-1138165